MRF5S19060NR1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistors

MRF5S19060NR1, RF Power Field Effect Transistors

1 μF, 35 V Tantalum Capacitor 10 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 10 μF, 35 V Tantalum Capacitors 220 μF, 63 V Electrolytic Capacitor, Radial 0.8 pF 100B Chip Capacitor 1.5 pF 100B Chip Capacitor 1.0 pF 100B Chip Capacitor 0.2 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors (120

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev.

6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz.

The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.

Typical 2 - carrier N - CDMA Perfor

MRF5S19060NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* 200°C Capable Plastic Package

* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

* In Tape and Ree