MRF6S20010GNR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operatio.
with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applicatio.
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