MRF6S20010GNR1 Description
Freescale Semiconductor Technical Data Document Number: 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
MRF6S20010GNR1 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 200°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- 2200 MHz, 10 W, 28 V GSM/GSM EDGE SINGLE N
- CDMA 2 x W