MRF6S20010GNR1, MRF6S20010NR1 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S20010GNR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S20010GNR1, MRF6S20010NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MRF6S20010GNR1, MRF6S20010NR1
Manufacturer	Freescale Semiconductor
File Size	627.46 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF6S20010NR1_FreescaleSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF6S20010GNR1, MRF6S20010NR1. Please refer to the document for exact specifications by model.

MRF6S20010GNR1 Product details

Description

100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D106K035AS Manufacturer Kemet ATC ATC Murata Kemet MRF6S20010NR1 MRF6S20010GNR1 4 RF Device Data Freescale Semiconductor www.DataSheet4U.com R2 C1 C11 R1 C7 R3 C3 C4 C5 C2 C6 CUT OUT AREA C9 C8

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
200°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S20010NR1 MRF6S20010GNR1 1600 - 2200 MHz, 10 W, 28 V GSM/GSM EDGE SINGLE N - CDMA 2 x W - CDMA.

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Published: Aug 29, 2009 |