MRFE6S9130HR3 Datasheet PDF (RF Power FET) | Download Freescale Semiconductor MRFE6S9130HR3

MRFE6S9130HR3 - RF Power FET

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9130H Rev. 1, 12/2008 MRFE6S9130HR3 MRFE6S9130HSR3 880 MHz, 27 W AVG. , 28 V SINGLE N - CDMA.

Datasheet Details

Part number	MRFE6S9130HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	452.86 KB
Description	RF Power FET
Datasheet	MRFE6S9130HR3 Datasheet

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 47.

Published: Jul 6, 2007 |