MRFE6S9130HSR3 Datasheet PDF (RF Power FET) | Download Freescale Semiconductor MRFE6S9130HSR3

MRFE6S9130HSR3 - RF Power FET

Download the MRFE6S9130HSR3 datasheet PDF (MRFE6S9130HR3 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power fet.

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRFE6S9130H Rev. 1, 12/2008 MRFE6S9130HR3 MRFE6S9130HSR3 880 MHz, 27 W AVG. , 28 V SINGLE N - CDMA.

Datasheet Details

Part number	MRFE6S9130HSR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	452.86 KB
Description	RF Power FET
Datasheet	MRFE6S9130HSR3 Datasheet

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., f = 880 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 19.2 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 47.

Published: Jul 6, 2007 |