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2SA1012 - PNP Epitaxial Silicon Transistor

Features

  • Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max. )at IC=-3A.
  • Complements the 2SC2562. Pb Lead-free.
  • High Speed Switching Time:tstg=1.0µs(Typ. ) Production specification 2SA1012 TO-220AB.

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PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Complements the 2SC2562. Pb Lead-free  High Speed Switching Time:tstg=1.0µs(Typ.) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature -50 V -5 V -5 A 2W -55 to +150 ℃ X028 Rev.A www.gmesemi.com 1 Production specification PNP Epitaxial Silicon Transistor 2SA1012 ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified.
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