Datasheet4U Logo Datasheet4U.com

2SA1012 Datasheet - GME

PNP Epitaxial Silicon Transistor

2SA1012 Features

* Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A

* Complements the 2SC2562. Pb Lead-free

* High Speed Switching Time:tstg=1.0µs(Typ.) Production specification 2SA1012 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Par

2SA1012 Datasheet (227.70 KB)

Preview of 2SA1012 PDF

Datasheet Details

Part number:

2SA1012

Manufacturer:

GME

File Size:

227.70 KB

Description:

Pnp epitaxial silicon transistor.

📁 Related Datasheet

2SA101 Ge PNP Drift Transistor (ETC)

2SA1010 SILICON POWER TRANSISTOR (NEC)

2SA1010 PNP Transistor (INCHANGE)

2SA1010 Silicon POwer Transistors (SavantIC)

2SA1011 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

2SA1011 POWER TRANSISTOR (Inchange Semiconductor)

2SA1011 Silicon PNP transistor (BLUE ROCKET ELECTRONICS)

2SA1012 TRANSISITOR (Toshiba Semiconductor)

2SA1012 PNP Transistor (SEMTECH)

2SA1012 PNP SILICON TRANSISTOR (UTC)

TAGS

2SA1012 PNP Epitaxial Silicon Transistor GME

Image Gallery

2SA1012 Datasheet Preview Page 2 2SA1012 Datasheet Preview Page 3

2SA1012 Distributor