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GME

2SD1762 Datasheet Preview

2SD1762 Datasheet

Power Transistor

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Power Transistor(50V,3A )
FEATURES
Low VCE(sat)
VCE(sat)=0.5V(Typ)IC/IB=2A/0.2A
Complements the 2SB1185.
Pb
Lead-free
Production specification
2SD1762
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Dissipation
Ta=25
TC=25
Junction and Storage Temperature
50 V
5V
3
A
4.5
1
W
25
-55 to +150
X036
Rev.A
www.gmesemi.com
1




GME

2SD1762 Datasheet Preview

2SD1762 Datasheet

Power Transistor

No Preview Available !

Production specification
Power Transistor(50V,3A )
2SD1762
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions
MIN Typ MAX UNIT
Collector-base Breakdown Voltage BVCBO
IC=50µA,IB=0
60
V
Collector-emitter Breakdown Voltage BVCEO
IC=1mA,IB=0
50
V
Emitter-base Breakdown Voltage
BVEBO
IE=50µA,IC=0
5
V
Collector Cut-off Current
ICBO VCB=40V,IE=0
1 µA
Emitter Cut-off Current
IEBO VEB=4V,IC=0
1 µA
DC Current Gain
hFE VCE=3V,IC=0.5A
60 320
Collector-emitter Saturation Voltage VCE(sat)
IC=2A, IB=0.2A
0.5 1
V
Output Capacitance
Cob
Transition Frequency
fT
CLASSIFICATION OF hFE
VCB=10V,IE=0,f=1MHz
VCE=10V, IE=-500mA
f=30MHz
Rank
Range
D
60-120
E
100-200
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
40 pF
90 MHz
F
160-320
X036
Rev.A
www.gmesemi.com
2


Part Number 2SD1762
Description Power Transistor
Maker GME
PDF Download

2SD1762 Datasheet PDF






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