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GME

CXT5551 Datasheet Preview

CXT5551 Datasheet

NPN Silicon Epitaxial Planar Transistor

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NPN Silicon Epitaxial Planar Transistor
FEATURES
z Switching and amplification in high voltage.
z Low current(max. 600mA)
z High voltage (max. 180V)
Pb
Lead-free
Production specification
CXT5551
APPLICATIONS
z High voltage amplifier application.
ORDERING INFORMATION
Type No.
Marking
CXT5551
1G6
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
RθJA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance
180
160
6
600
0.625
250
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
mA
W
/W
E059
Rev.A
www.gmicroelec.com
1




GME

CXT5551 Datasheet Preview

CXT5551 Datasheet

NPN Silicon Epitaxial Planar Transistor

No Preview Available !

Production specification
NPN Silicon Epitaxial Planar Transistor
CXT5551
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
180 V
Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA,IB=0
160 V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
6
V
Collector cut-off current
ICBO VCB=120V,IE=0
50 nA
Emitter cut-off current
DC current gain
IEBO
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
Small-signal current gain
hfe
Noise Figure
NF
VEB=4V,IC=0
50 nA
VCE = 5V; IC= 1mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 50mA
IC=10mA, IB= 1mA
IC=50mA, IB= 5mA
IC=10mA, IB= 1mA
IC=50mA, IB= 5mA
VCE=10V, IC= 10mA,
f=100MHz
80
100 300
30
0.15
0.20
V
1.0
1.0
V
100 300 MHz
VCB=10V,IE=0,f=1MHz
6.0 pF
IC=1mA,VCE=10V,
f=1.0kHz
50 200
IC=200uA,VCE=5V,
f=10-15.7kHz,RS=1.0
8 dB
E059
Rev.A
www.gmicroelec.com
2


Part Number CXT5551
Description NPN Silicon Epitaxial Planar Transistor
Maker GME
Total Page 4 Pages
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