GSM6332 Description
The GSM6332 is the N and P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON) , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM6332 Key Features
- N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V
- P-Channel -20V/-1.0A,RDS(ON)= 600mΩ@VGS=-4.5V -20V/-0.8A,RDS(ON)= 800mΩ@VGS=-2.5V -20V/-0.7A,RDS(ON)= 1440mΩ@VGS=-1.8V
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- SOT-363 package design