KDS8333C - 60V Complementary PowerTrench MOSFETGuangdong Kexin Industrial

Guangdong Kexin Industrial

Datasheet Details

Part number	KDS8333C
Manufacturer	Guangdong Kexin Industrial
File Size	111.63 KB
Description	60V Complementary PowerTrench MOSFETGuangdong Kexin Industrial
Datasheet	KDS8333C_GuangdongKexinIndustrial.pdf

N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @ VGS =4.5V Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Pow.

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Published: May 7, 2009 |