Part number:
KDS8333C
Manufacturer:
Guangdong Kexin Industrial
File Size:
111.63 KB
Description:
60v complementary powertrench mosfetguangdong kexin industrial.
* N-Channel 4.1 A, 30 V RDS(ON) = 80m RDS(ON) = 130m P-Channel -3.4 A, 30 V RDS(ON) = 130 m RDS(ON) = 200 m Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. @ VGS =- 10 V @ VGS =-4.5V @ VGS = 10 V @
KDS8333C Datasheet (111.63 KB)
KDS8333C
Guangdong Kexin Industrial
111.63 KB
60v complementary powertrench mosfetguangdong kexin industrial.
📁 Related Datasheet
KDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor (Guangdong Kexin Industrial)
KDS8958 Dual N & P-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
KDS Intrusion Switches (ITT Industries)
KDS112 SILICON EPITAXIAL TYPE DIODE (KEC)
KDS112E SILICON EPITAXIAL TYPE DIODE (KEC)
KDS113 SILICON EPITAXIAL TYPE DIODE (KEC)
KDS114 SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS114E SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS114V SILICON EPITAXIAL PLANAR DIODE (KEC)
KDS115 SILICON EPITAXIAL PLANAR DIODE (KEC)
TAGS
Image Gallery