HM4618SP Datasheet - H&M Semiconductor

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

HM4618SP Features

* VSSS =20V,IS =6A

* 2.5V drive

* Common-drain type

* 2KV HBM Package Information

* Minimum Packing Quantity : 5,000 pcs./reel Application

* Lithium-ion battery charging and discharging switch Equivalent Circuit Marking and pin assignment CSP top view Absolute Maximum Rat

HM4618SP General Description

The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its.

HM4618SP Datasheet (489.95 KB)

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Datasheet Details

Part number:

HM4618SP

Manufacturer:

H&M Semiconductor

File Size:

489.95 KB

Description:

Common-drain dual n-channel enhancement mode field effect transistor.

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HM4618SP Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor H&M Semiconductor

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HM4618SP Features

HM4618SP General Description

Datasheet Details

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Description:

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