HM4618SP - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM4618SP
Manufacturer	H&M Semiconductor
File Size	489.95 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	HM4618SP Datasheet
Additional preview pages of the HM4618SP datasheet.

HM4618SP Product details

Description

The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Features

VSSS =20V,IS =6A.
2.5V drive.
Common-drain type.
2KV HBM Package Information.
Minimum Packing Quantity : 5,000 pcs. /reel.

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Published: Jun 24, 2019 |