H2N6668 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

H2N6668 General Description

The H2N6668 is designed for general-purpose amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 * Maximum Temperatures Storage Temperature -55~+150°C Junction Temperature +150°C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25°C) .

H2N6668 Datasheet (40.44 KB)

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H2N6668

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Hi-Sincerity Mocroelectronics

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40.44 KB

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. H2N6668 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6754 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Pag.

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H2N6668 General Description

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