logo

HBC556 Datasheet, Hi-Sincerity Mocroelectronics

HBC556 Datasheet, Hi-Sincerity Mocroelectronics

HBC556

datasheet Download (Size : 47.06KB)

HBC556 Datasheet

HBC556 transistor

pnp epitaxial planar transistor.

HBC556

datasheet Download (Size : 47.06KB)

HBC556 Datasheet

HBC556 Features and benefits

HBC556 Features and benefits


* High Breakdown Voltage: 65V at IC=1mA
* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage.

HBC556 Description

HBC556 Description

The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features
* High Breakdown Voltage: 65V at IC=1mA
* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings
* Maximum Temperatures.

Image gallery

HBC556 Page 1 HBC556 Page 2 HBC556 Page 3

TAGS

HBC556
PNP
EPITAXIAL
PLANAR
TRANSISTOR
Hi-Sincerity Mocroelectronics

Manufacturer


Hi-Sincerity Mocroelectronics

Related datasheet

HBC557

HBC558

HBC517

HBC546

HBC547

HBC548

HBC114ES6R

HBC114TS6R

HBC114YC6

HBC114YS5

HBC114YS6R

HBC123ES6R

HBC123JS6R

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts