HBC556 Features
* High Breakdown Voltage: 65V at IC=1mA
* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Diss
HBC556_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HBC556, HBC556_Hi
Hi-Sincerity Mocroelectronics
47.06 KB
Pnp epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: HBC556, HBC556_Hi.
Please refer to the document for exact specifications by model.
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