HBC557 - PNP EPITAXIAL PLANAR TRANSISTOR
HBC557 Features
* High Breakdown Voltage: 45V
* High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 m