HBC557, HBC557_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBC557 PNP EPITAXIAL PLANAR TRANSISTOR

HBC557 Features

* High Breakdown Voltage: 45V

* High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 m

Datasheet Details

HBC557, HBC557_Hi

Hi-Sincerity Mocroelectronics

46.91 KB

Pnp epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HBC557, HBC557_Hi.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

HBC556 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC558 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC517 NPN EPITAXIAL PLANAR TRANSISTOR (HI-SINCERITY)

HBC546 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC547 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC548 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC114ES6R Dual NPN Digital Transistor (CYStech Electronics)

HBC114TS6R Dual NPN Digital Transistor (CYStech Electronics)

TAGS

HBC557 Distributor