HBC557 Datasheet - Hi-Sincerity Mocroelectronics

HBC557 PNP EPITAXIAL PLANAR TRANSISTOR

HBC557 Features

* High Breakdown Voltage: 45V

* High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 m

Datasheet Details

HBC557

Hi-Sincerity Mocroelectronics

46.91 KB

Pnp epitaxial planar transistor.

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