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HBC557, HBC557_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

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HBC557 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBC557, HBC557_Hi. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number: HBC557, HBC557_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 46.91 KB
Datasheet: HBC557_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBC557, HBC557_Hi.
Please refer to the document for exact specifications by model.

HBC557 Product details

Description

The HBC557 is designed for use in driver stage of audio amplifier applications.

Features

High Breakdown Voltage: 45V.
High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Published: Mar 23, 2005 |