Datasheet4U Logo Datasheet4U.com

HBC557 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC557, a member of the HBC557_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBC557 is designed for use in driver stage of audio amplifier applications.

Features

  • High Breakdown Voltage: 45V.
  • High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Datasheet preview – HBC557

Datasheet Details

Part number HBC557
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.91 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC557 Datasheet
Additional preview pages of the HBC557 datasheet.

📁 Similar Datasheet

  • HBC517 - NPN EPITAXIAL PLANAR TRANSISTOR (HI-SINCERITY)
  • HBC114ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114TS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC114YC6 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS5 - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC114YS6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123ES6R - Dual NPN Digital Transistor (CYStech Electronics)
  • HBC123JS6R - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC124ES6R - Dual NPN Digital Transistors (CYStech Electronics)
  • HBC124XS6R - Dual NPN Digital Transistor (CYStech Electronics)
Other Datasheets by Hi-Sincerity Mocroelectronics
  • HBC556 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC558 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC546 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC547 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC548 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC237 - NPN EPITAXIAL PLANAR TRANSISTOR
  • HBC327 - PNP EPITAXIAL PLANAR TRANSISTOR
  • HBC807 - PNP EPITAXIAL PLANAR TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HI-SINCERITY MICROELECTRONICS CORP. HBC557 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6423 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 Description The HBC557 is designed for use in driver stage of audio amplifier applications. Features • High Breakdown Voltage: 45V • High AC Current Gain: 75-800 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ....................................
Published: |