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HBC556 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC556, a member of the HBC556_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBC556 is primarily intended for use in driver stage of audio amplifiers.

Features

  • High Breakdown Voltage: 65V at IC=1mA.
  • High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Datasheet preview – HBC556

Datasheet Details

Part number HBC556
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.06 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC556 Datasheet
Additional preview pages of the HBC556 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/4 Description The HBC556 is primarily intended for use in driver stage of audio amplifiers. Features • High Breakdown Voltage: 65V at IC=1mA • High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ..............
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