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HBC556, HBC556_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

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HBC556 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBC556, HBC556_Hi. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number: HBC556, HBC556_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 47.06 KB
Datasheet: HBC556_Hi-SincerityMocroelectronics.pdf
Description: PNP EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBC556, HBC556_Hi.
Please refer to the document for exact specifications by model.

HBC556 Product details

Description

The HBC556 is primarily intended for use in driver stage of audio amplifiers.

Features

High Breakdown Voltage: 65V at IC=1mA.
High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings.
Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW.
Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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