* High Breakdown Voltage: 65V at IC=1mA
* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Diss
HBC556
Hi-Sincerity Mocroelectronics
47.06 KB
Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC556 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6422 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page.
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