Part number:
HBC556
Manufacturer:
Hi-Sincerity Mocroelectronics
File Size:
47.06 KB
Description:
Pnp epitaxial planar transistor.
HBC556 Features
* High Breakdown Voltage: 65V at IC=1mA
* High AC Current Gain: 75-500 at IC=2mA,VCE=5V,f=1MHz TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Diss
Datasheet Details
HBC556
Hi-Sincerity Mocroelectronics
47.06 KB
Pnp epitaxial planar transistor.
📁 Related Datasheet
HBC557 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HBC558 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HBC517 NPN EPITAXIAL PLANAR TRANSISTOR (HI-SINCERITY)
HBC546 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HBC547 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HBC548 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HBC114ES6R Dual NPN Digital Transistor (CYStech Electronics)
HBC114TS6R Dual NPN Digital Transistor (CYStech Electronics)
HBC556 Distributor