HBC558 Datasheet - Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HBC558 General Description

The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation .

HBC558 Datasheet (45.48 KB)

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HBC558

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Hi-Sincerity Mocroelectronics

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45.48 KB

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Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC558 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HA200104 Issued Date : 2001.10.01 Revised Date : 2004.07.16 Pa.

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HBC558 General Description

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