HBC558, HBC558_Hi Datasheet - Hi-Sincerity Mocroelectronics

HBC558 - PNP EPITAXIAL PLANAR TRANSISTOR

The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

Absolute Maximum Ratings TO-92 * Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C * Maximum Power Dissipation

Datasheet Details

HBC558, HBC558_Hi

Hi-Sincerity Mocroelectronics

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Pnp epitaxial planar transistor.

This datasheet PDF includes multiple part numbers: HBC558, HBC558_Hi.
Please refer to the document for exact specifications by model.

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