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HBC558, HBC558_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HBC558, HBC558_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBC558, HBC558_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
45.48 KB
Datasheet
download datasheet HBC558_Hi-SincerityMocroelectronics.pdf
Description
PNP EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBC558, HBC558_Hi.
Please refer to the document for exact specifications by model.

HBC558 Product details

Description

The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 500 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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