* High Breakdown Voltage: 65V
* High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°
HBC546
Hi-Sincerity Mocroelectronics
48.01 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page.
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