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HBC546 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC546, a member of the HBC546_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBC546 is primarily intended for use in driver stage of audio amplifiers.

Features

  • High Breakdown Voltage: 65V.
  • High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Datasheet preview – HBC546

Datasheet Details

Part number HBC546
Manufacturer Hi-Sincerity Mocroelectronics
File Size 48.01 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC546 Datasheet
Additional preview pages of the HBC546 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6417 Issued Date : 1992.11.25 Revised Date : 2002.02.18 Page No. : 1/4 Description The HBC546 is primarily intended for use in driver stage of audio amplifiers. Features • High Breakdown Voltage: 65V • High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .............................
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