Datasheet4U Logo Datasheet4U.com

HBC546 Datasheet - Hi-Sincerity Mocroelectronics

HBC546 NPN EPITAXIAL PLANAR TRANSISTOR

HBC546 Features

* High Breakdown Voltage: 65V

* High DC Current Gain: 110-800 at IC=2mA, VCE=5V TO-92 Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum

* Maximum Power Dissipation Total Power Dissipation (TA=25°

HBC546 Datasheet (48.01 KB)

Preview of HBC546 PDF
HBC546 Datasheet Preview Page 2 HBC546 Datasheet Preview Page 3

Datasheet Details

Part number:

HBC546

Manufacturer:

Hi-Sincerity Mocroelectronics

File Size:

48.01 KB

Description:

Npn epitaxial planar transistor.

📁 Related Datasheet

HBC547 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC548 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC517 NPN EPITAXIAL PLANAR TRANSISTOR (HI-SINCERITY)

HBC556 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC557 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC558 PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)

HBC114ES6R Dual NPN Digital Transistor (CYStech Electronics)

HBC114TS6R Dual NPN Digital Transistor (CYStech Electronics)

TAGS

HBC546 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

HBC546 Distributor