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HBC547 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC547, a member of the HBC547_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBC547 is designed for use in driver stage of audio amplifier.

Features

  • High Breakdown Voltage: 45V.
  • High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 625 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

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Datasheet preview – HBC547

Datasheet Details

Part number HBC547
Manufacturer Hi-Sincerity Mocroelectronics
File Size 50.33 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC547 Datasheet
Additional preview pages of the HBC547 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HBC547 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6418 Issued Date : 1992.11.25 Revised Date : 2005.02.04 Page No. : 1/5 Description The HBC547 is designed for use in driver stage of audio amplifier. Features • High Breakdown Voltage: 45V • High DC Current Gain: 110-800 at IC=2mA TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................
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