* High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW
* Maximum Voltages and Currents (Ta=25°C) VCES
HBC237
Hi-Sincerity Mocroelectronics
39.69 KB
Npn epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6446-B Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No. : 1/4 HBC237 NPN EPITAXIAL PLAN.
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