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HBC237 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBC237, a member of the HBC237_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBC237 is primarily intended for in driver stage of audio amplifiers.

Features

  • High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 400 mW.
  • Maximum Voltages and Currents (Ta=25°C) VCES Collector to Emitter Voltage 50 V VCEO Collector to Emitter Voltage.

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Datasheet preview – HBC237

Datasheet Details

Part number HBC237
Manufacturer Hi-Sincerity Mocroelectronics
File Size 39.69 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC237 Datasheet
Additional preview pages of the HBC237 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6446-B Issued Date : 1992.11.25 Revised Date : 2000.09.20 Page No. : 1/4 HBC237 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC237 is primarily intended for in driver stage of audio amplifiers. Features High Breakdown Voltage: 45V at IC=2mA Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ...............................................................................
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