* High DC Current Gain: 100-600 at IC=100mA,VCE=1V
* Complementary to HBC337 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (TA=25°C)
HBC327
Hi-Sincerity Mocroelectronics
52.12 KB
Pnp epitaxial planar transistor.
HI-SINCERITY MICROELECTRONICS CORP. HBC327 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6413 Issued Date : 1993.01.15 Revised Date : 2005.01.25 Page.
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