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Hitachi Power Semiconductor Device Electronic Components Datasheet

HL6714G Datasheet

AlGaInP Laser Diode

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HL6714G pdf
HL6714G
AlGaInP Laser Diode
ODE-208-192C (Z)
Rev.3
Jan. 2003
Description
The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical
equipment. Hermetic sealing of the package assures high reliability.
Features
Visible light output at wavelengths up to 680 nm
Single longitudinal mode
Low astigmatism: 10 µm Typ
High output power: 10 mW (CW)
Built-in monitor photodiode
Package Type
HL6714G: G2
Internal Circuit
13
PD LD
2


Hitachi Power Semiconductor Device Electronic Components Datasheet

HL6714G Datasheet

AlGaInP Laser Diode

No Preview Available !

HL6714G pdf
HL6714G
Absolute Maximum Ratings
(TC = 25°C)
Item
Symbol
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
PO
PO(pulse)
VR(LD)
VR(PD)
Topr
Storage temperature
Tstg
Note: Pulse condition : Pulse width 1 µs , duty 50%
Rated Value
10
12 *
2
30
–10 to +50
–40 to +85
Unit
mW
mW
V
V
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Symbol Min Typ Max Unit
Test Conditions
Optical output power
Threshold current
PO 10 — — mW —
Ith
20 35 60 mA
LD operating voltage
Slope efficiency
Beam divergence
parallel to the junction
VOP — — 2.7 V
PO = 10 mW
ηs 0.3 0.5 0.8 mW/mA 6 (mW) / (I(8mW) – I(2mW))
θ// 5 8 11 deg. PO = 10 mW, FWHM
Beam divergence
θ⊥
parpendicular to the junction
18 22 30 deg. PO = 10 mW, FWHM
Astigmatism
Lasing wavelength
Monitor current
AS
— 10 — µm
PO = 10 mW, NA = 0.55
λp
660 670 680 nm
PO = 10 mW
IS
0.3 0.8 1.5 mA
PO = 10 mW, VR(PD) = 5 V
Rev.3, Jan. 2003, page 2 of 7


Part Number HL6714G
Description AlGaInP Laser Diode
Maker Hitachi
Total Page 7 Pages
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HL6714G pdf
HL6714G Datasheet PDF
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