H5N2005DS - Silicon N Channel MOS FET High Speed Power Switching
Hitachi Semiconductor (now Renesas)
Download the H5N2005DS datasheet PDF.
This datasheet also covers the H5N2005DL variant, as both devices belong to the same silicon n channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.
Key Features
Low on-resistance www. DataSheet4U. com.
Low drive current.
High speed switching
Outline
DPAK-2
4 4
D
1 2
3
H5N2005DS
G 1 2
3
H5N2005DL
S
1. Gate 2. Drain 3. Source 4. Drain
H5N2005DL, H5N2005DS
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation
www. DataSheet4U. com
Symbol VDSS VGSS ID ID
N.
Note: The manufacturer provides a single datasheet file (H5N2005DL_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for H5N2005DS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
H5N2005DS. For precise diagrams, and layout, please refer to the original PDF.
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor opera...
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ic and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
H5N2005DS Datasheet
