Datasheet4U Logo Datasheet4U.com

2N6292 - NPN Transistor

Description

DC Current Gain- : hFE = 30-150@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) Complement to Type 2N6107 APPLICATIONS Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6292 Silicon NPN Power Transistors Savantic
2N6292 Power Transistors RECTRON
2N6292 Bipolar Transistor Multicomp
2N6292 NPN Power Transistors ON Semiconductor
2N6292 NPN POWER TRANSISTORS GE

Other Datasheets by Inchange Semiconductor

Part Number Description
2N6290 NPN Transistor
2N6291 NPN Transistor
2N6293 NPN Transistor
2N6212 PNP Transistor
2N6216 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 30-150@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 70V(Min) ·Complement to Type 2N6107 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.
Published: |