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Inchange Semiconductor
2SD1046
DESCRIPTION - Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) - Good Linearity of h FE - High Current Capability - Wide Area of Safe Operation - plement to Type 2SB816 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - For LF power amplifier, 50W output large power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -40~150 ℃ isc website:.iscsemi. 1 isc & iscsemi is registered trademark isc Silicon NPN Power...