2SD1046 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·plement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1046 TC=25℃...
