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2SD1309 - Silicon NPN Darlington Power Transistor

Description

High DC Current Gain :hFE= 2000(Min) @ IC= 3A Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 1.5V (Max) @ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and low-speed switching industrial use. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current 8 A ICM Collector Current-peak 12 A IB Base Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature 0.8 A 40 W 1.
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