2SD1357 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V Complement to Type 2SB997 Minimum Lot-to-Lot variations for robust device performance and re

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2SD1357 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1357
Manufacturer	Inchange Semiconductor
File Size	168.58 KB
Description	NPN Transistor
Datasheet	2SD1357 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1357 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.