Datasheet Summary
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
- High DC Current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Igniter applications
- High voltage switching...
