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2SD1409 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications AB

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Igniter applications ·High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1409 isc website：www.iscsemi.