2SD1409 Overview
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) - High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SD1409 |
|---|---|
| Description | NPN Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 209.31 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D1409 | SavantIC | 2SD1409 |
| 2SD1409A | Toshiba | NPN Transistor |
| 2SD1409 | Toshiba | Silicon NPN Transistor |
| 2SD1409 | SavantIC | SILICON POWER TRANSISTOR |
| D1402 | SavantIC | 2SD1402 |