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2SD1409 Datasheet Preview

2SD1409 Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High DC Current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Igniter applications
·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
1
A
2
W
25
150
Tstg
Storage Temperature Range
-55~150
2SD1409
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SD1409 Datasheet Preview

2SD1409 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
2SD1409
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
2.5
V
VECF
C-E Diode Forward Voltage
IF= 4A
3.0
V
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3.0
mA
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
600
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
100
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
35
pF
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= IB2= 40mA
RL= 25Ω; VCC= 100V
PW=20μs; Duty Cycle1%
1.0
μs
8.0
μs
5.0
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SD1409
Description NPN Transistor
Maker INCHANGE
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2SD1409 Datasheet PDF






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