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BD646F - PNP Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) High DC Current Gain Low Saturation Voltage Complement to Type BD645F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pul

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Datasheet Details

Part number BD646F
Manufacturer INCHANGE
File Size 210.07 KB
Description PNP Transistor
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isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD646F DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD645F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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