Description
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) - High DC Current Gain - Low Saturation Voltage - plement to Type BD645F - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as plementary AF push-pull output stage applications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.15 A 20 W 32 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c 1.6 ℃/W Rth j-a isc website：.iscsemi.
