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IS66WVD4M16ALL - 64Mb Async and Burst CellularRAM

Description

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

Features

  • Single device supports asynchronous and burst operation.
  • Mixed Mode supports asynchronous write and synchronous read operation.
  • Dual voltage rails for optional performance.
  • VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • Multiplexed address and data bus.
  • ADQ0~ADQ15.
  • Asynchronous mode read access : 70ns.
  • Burst mode for Read and Write operation.
  • 4, 8, 16 or Continuous.
  • Low Power Consumption.
  • Asynchronous Operation < 25 mA.
  • Burst operation < 35 mA (@10.

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Datasheet preview – IS66WVD4M16ALL

Datasheet Details

Part number IS66WVD4M16ALL
Manufacturer ISSI (now Infineon)
File Size 557.87 KB
Description 64Mb Async and Burst CellularRAM
Datasheet download datasheet IS66WVD4M16ALL Datasheet
Additional preview pages of the IS66WVD4M16ALL datasheet.

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IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth. The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion of the array and Temperature Controlled Refresh. Both these modes reduce standby current drain. The device can be operated in a standard asynchronous mode and high performance burst mode.
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