* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage
* FBSOA
* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8
* VCES, VGE
IXBH42N300HV Datasheet (1.89 MB)
IXBH42N300HV
IXYS
1.89 MB
Monolithic bipolar mos transistor.
High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C .
📁 Related Datasheet
IXBH42N170 Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH42N170A Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH42N250 Bipolar MOS Transistor (IXYS)
IXBH40N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH40N160 Monolithic Bipolar MOS Transistor (IXYS)
IXBH10N170 Bipolar MOS Transistor (IXYS Corporation)
IXBH12N300 Bipolar MOS Transistor (IXYS)
IXBH14N300HV Bipolar MOS Transistor (IXYS)
IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBH15N160 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)
