* High Voltage Package
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage
* FBSOA
* SCSOA Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = 0.8
* VCES, VGE
IXBT42N300HV Datasheet (1.89 MB)
IXBT42N300HV
IXYS
1.89 MB
Monolithic bipolar mos transistor.
High Voltage, BiMOSFETTM IXBT42N300HV Monolithic Bipolar MOS Transistor IXBH42N300HV Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C .
📁 Related Datasheet
IXBT42N170 Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBT42N170A Monolithic Bipolar MOS Transistor (IXYS Corporation)
IXBT10N170 Bipolar MOS Transistor (IXYS Corporation)
IXBT12N300 Bipolar MOS Transistor (IXYS)
IXBT12N300HV Bipolar MOS Transistor (IXYS)
IXBT14N300HV Bipolar MOS Transistor (IXYS)
IXBT16N170 BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)
IXBT16N170A Bipolar MOS Transistor (IXYS Corporation)
IXBT16N170AHV Bipolar MOS Transistor (IXYS)
IXBT20N300 Bipolar MOS Transistor (IXYS)
