* International Standard Packages
* Dynamic dv/dt Rating
* Avalanche Rated
* Fast Intrinsic Diode
* Low QG & RDS(on)
* Low Drain-to-Tab Capacitance
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings Applications
* DC-DC Converters
* Batt
IXFH6N120P Datasheet (502.88 KB)
IXFH6N120P
IXYS Corporation
502.88 KB
Power mosfet.
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VG.
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