IXFL44N80 isoplus264 equivalent, hiperfet power mosfets isoplus264.
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 V 4.
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