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IXFP7N80P - Power MOSFET

Features

  • z z z z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5.
  • ID25, Notes 1, 2 Charac.

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Datasheet Details

Part number IXFP7N80P
Manufacturer IXYS
File Size 165.95 KB
Description Power MOSFET
Datasheet download datasheet IXFP7N80P Datasheet
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PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 800 800 ±30 ±40 7 18 4 300 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g z S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z z z z 1.6mm (0.062in.
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