2SC3355 Overview
Description
Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz - High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part | 2SC3355 |
|---|---|
| Description | Silicon NPN RF Transistor |
| Category | Transistor |
| Manufacturer | Inchange Semiconductor |
| Size | 192.01 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SC3355 | Unisonic Technologies | NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC3355 | NEC | NPN Silicon Transistor |
| C3355 | NEC | 2SC3355 |
| 2SC3356 | NEC | NPN Silicon Transistor |
| 2SC3356 | EVVO | NPN Transistors |