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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF840
·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max)
·DESCRITION ·Designed for high voltage, high speed switching power applic-
ations such as switching regulators, converters, solenoid and relay drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
500 ±20
V V
ID Drain Current-Continuous
8A
IDM Drain Current-Single Plused
32 A
PD Total Dissipation @TC=25℃
125 W
Tj Max.