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IRF840 - N-Channel MOSFET Transistor

Key Features

  • Drain Current.
  • ID=8.0A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max).

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid and relay drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 500 ±20 V V ID Drain Current-Continuous 8A IDM Drain Current-Single Plused 32 A PD Total Dissipation @TC=25℃ 125 W Tj Max.