2ED2108S06F Datasheet - Infineon

650V half bridge gate driver

2ED2108S06F Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

2ED2108S06F General Description

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages.

2ED2108S06F Datasheet (1.06 MB)