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Infineon Technologies Electronic Components Datasheet

2ED2108S06F Datasheet

650V half bridge gate driver

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2ED2108 (4) S06F (J)
2ED2108 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
Features
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
Negative VS transient immunity of 100 V
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
Logic operational up to –11 V on VS Pin
Negative voltage tolerance on inputs of –5 V
Independent under voltage lockout for both channels
Schmitt trigger inputs with hysteresis
3.3 V, 5 V and 15 V input logic compatible
Maximum supply voltage of 25 V
Dual package options of DSO-8 and DSO-14
High and low voltage pins separated for maximum creepage and
clearance (2ED21084S06J version)
Separate logic and power ground with the 2ED21084S06J version
Internal 540 ns dead time and programmable up to 5 us with
external resistor (2ED21084S06J only)
RoHS compliant
Product summary
VS_OFFSET = 650 V max.
Io+pk / Io-pk (typ.) = + 0.29 A/ - 0.7 A
VCC = 10 V to 20 V
Delay Matching = 35 ns max.
Internal deadtime = 540 ns typ.
tON / tOFF (typ.) = 200 ns/ 200 ns
Packages
DSO-8
DSO-14
Potential applications
Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications.
Typical Infineon recommendations are as below:
Motor drives, general purpose inverters having TRENCHSTOP™ IGBT6 or 600 V EasyPACK™ modules or its
equivalent power stages
Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or
TRENCHSTOP™ family IGBTs or their equivalent power stages
Battery operated small home appliances such as power tools, vaccum cleaners using low voltage OptiMOS™
MOSFETs or their equivalent power stages
Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having
high voltage CoolMOS™ super junction MOSFETs or TRENCHSTOP™ H3 and WR5 IGBT series or their equivalent
High power LED and HID lighting having CoolMOS™ super junction MOSFETs
Electric vehicle (EV) charging stations and battery management systems
Driving 650 V SiC MOSFETs in above applications
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Ordering information
Base part number
2ED2108S06F
2ED21084S06J
Package type
DSO - 8
DSO - 14
Standard pack
Form
Tape and Reel
Tape and Reel
Quantity
2500
2500
Orderable part number
2ED2108S06FXUMA1
2ED21084S06JXUMA1
Datasheet
www.infineon.com/soi
Please read the Important Notice and Warnings at the end of this document
Page 1 of 25
V 2.20
2020-01-14


Infineon Technologies Electronic Components Datasheet

2ED2108S06F Datasheet

650V half bridge gate driver

No Preview Available !

2ED2108 (4) S06F (J)
650 V half bridge gate driver with integrated bootstrap diode
Description
The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and
low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and
noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC =
15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no
parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with
standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power
MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V.
VCC
HIN
LIN
Integrated
RBS DBS
1 VCC
VB 8
2 HIN
HO 7
3 LIN
VS 6
4 COM
LO 5
Up to 650V
TO LOAD
VCC
HIN
LIN
VSS
RDT
2ED2108S06F
* Bootstrap diode is monolithically integrated
* Please refer to our application notes and design tips for proper circuit board layout.
Figure 1 Typical application block diagram
Integrated
RBS DBS
1 VCC
2 HIN
3 LIN
4 DT
5 VSS
6 COM
7 LO
14
VB 13
HO 12
VS 11
10
9
8
2ED21084S06J
Up to 650V
TO LOAD
Summary of feature comparison of the 2ED210x family:
Table 1
Part No.
Input
logic
2ED2106S06F
2ED21064S06J
2ED2108S06F
2ED21084S06J
HIN, LIN
HIN, LIN
2ED2109S06F
2ED21094S06J IN, SD
Cross
conduction
prevention
logic
No
Yes
Yes
2ED21091S06F IN, DT/SD Yes
Deadtime
Ground pins tON / tOFF Package
None
Internal 540 ns
Programmable
540 ns - 5000 ns
Internal 540 ns
Programmable
540 ns - 5000 ns
Programmable
540 ns - 2700 ns
COM
VSS / COM
COM
VSS / COM
COM
VSS / COM
COM
200 ns /
200 ns
DSO - 8
DSO - 14
DSO - 8
DSO - 14
DSO - 8
740 ns /
200 ns
DSO - 14
DSO – 8
Datasheet
www.infineon.com/soi
2 of 25
V 2.20
2020-01-14


Part Number 2ED2108S06F
Description 650V half bridge gate driver
Maker Infineon
Total Page 25 Pages
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