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2ED2108S06F - 650V half bridge gate driver

General Description

The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Key Features

  • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic operational up to.
  • 11 V on VS Pin.
  • Negative voltage tolerance on inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2ED2108 (4) S06F (J) 2ED2108 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675 V  Integrated ultra-fast, low resistance bootstrap diode  Logic operational up to –11 V on VS Pin  Negative voltage tolerance on inputs of –5 V  Independent under voltage lockout for both channels  Schmitt trigger inputs with hysteresis  3.