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2ED2108S06F 650V half bridge gate driver

2ED2108S06F Description

2ED2108 (4) S06F (J) 2ED2108 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode .
The 2ED2108 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

2ED2108S06F Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Integrated ultra-fast

2ED2108S06F Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP™ IGBT6 or 600 V EasyPACK™ modules or its equivalent power stages
* Refrigeration compressors,

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650V half bridge gate driver Infineon
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