2ED2304S06F Datasheet | Infineon

650 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features - Infineon thin-film-SOI-technology - Fully operational to +650 V - Floating channel designed for bootstrap operation - Output source/sink current capability +0.36 A/-0.7 A - Integrated Ultra-fast, low RDS(ON) Bootstrap Diode - Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology - 10 ns typ., 60 ns max. propagation delay matching - d V/dt immune ±50 V - Gate drive supply range from 10 V to 20 V - Undervoltage lockout for both channels - Integrated dead-time with interlocking function - 3.3 V, 5 V and 15 V input logic patible - Ro HS pliant Product summary VOFFSET IO+/- (typ.) VOUT Delay Matching Internal deadtime ton/off (typ.) = 670 V max. = 0.36 A/0.7 A = 10 V - 17.5 V = 60 ns max. = 75 ns = 310 ns/300 ns Package DSO-8 Potential applications - Motor drives, General purpose inverters - Refrigeration pressors - Half-bridge and full-bridge converters in offline AC-DC power supplies for tele and lighting Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Description The 2ED2304S06F is a 650-V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are patible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction with built in interlock lock logic to prevent shoot-through. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650...