2ED2304S06F Key Features
- Infineon thin-film-SOI-technology
- Fully operational to +650 V
- Floating channel designed for bootstrap operation
- Output source/sink current capability +0.36 A/-0.7 A
- Integrated Ultra-fast, low RDS(ON) Bootstrap Diode
- Tolerant to negative transient voltage up to -100 V
- 10 ns typ., 60 ns max. propagation delay matching
- dV/dt immune ±50 V
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels