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Infineon Technologies Electronic Components Datasheet

AUIRGP35B60PD Datasheet

IGBT

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AUTOMOTIVE GRADE
AUIRGP35B60PD
WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Lead-Free, RoHS Compliant
Automotive Qualified *
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.85V
@ VGE = 15V IC = 22A
Equivalent MOSFET
Parameters
RCE(on) typ. = 84m
ID (FET equivalent) = 35A
C
Applications
PFC and ZVS SMPS Circuits
DC/DC Converter Charger
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
G
Gate
GC E
TO-247AC
AUIRGP35B60PD
C
Collector
E
Emitter
Base Part Number
AUIRGP35B60PD
Package Type
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
AUIRGP35B60PD
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress rat-
ings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
Pulse Collector Current (Ref. Fig. C. T.4)
ILM
Clamped Inductive Load Current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFSM
Maximum Repetitive Forward Current
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
V
60
34
120
120
A
40
15
60
±20
V
308
123
W
-55 to +150
°C
300 (0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case (each IGBT)
Thermal Resistance Junction-to-Case (each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
* Qualification standards can be found at www.infineon.com
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
6.0(0.21)
Max.
0.41
1.7
–––
40
–––
Units
°C/W
g(oz)
1
2017-08-24


Infineon Technologies Electronic Components Datasheet

AUIRGP35B60PD Datasheet

IGBT

No Preview Available !

AUIRGP35B60PD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
RG
Internal Gate Resistance
VCE(on)
Collector-to-Emitter Saturation Voltage
0.78
1.7
1.85
2.25
2.37
— 3.00
VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
3.0 4.0
— -10
36
— 3.0
— 0.35
VFM
Diode Forward Voltage Drop
— 1.30
— 1.20
IGES
Gate-to-Emitter Leakage Current
Max. Units
Conditions
Ref. Fig.
V VGE = 0V, IC = 500µA
— V/°C VGE = 0V, IC = 1mA (25°C-125°C)
1MHz, Open Collector
4,5,6,8,9
2.15
IC = 22A, VGE = 15V
2.55
2.80
V
IC = 35A, VGE = 15V
IC = 22A, VGE = 15V, TJ = 125°C
3.45
IC = 35A, VGE = 15V, TJ = 125°C
5.0 V IC = 250µA
— mV/°C VCE = VGE, IC = 1.0mA
S VCE = 50V, IC = 22A,PW = 80µs
375 µA VGE = 0V, VCE = 600V
— mA VGE = 0V, VCE = 600V,TJ = 125°C
1.70
1.60
V
IF = 15A
IF = 15A, TJ = 125°C
±100 nA VGE = ±20V, VCE = 0V
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref. Fig.
Qg
Total Gate Charge (turn-on)
— 160 240
IC = 22A
17
Qge
Gate-to-Emitter Charge (turn-on)
55
83 nC VGE = 15V
CT1
Qgc
Gate-to-Collector Charge (turn-on)
— 21 32
VCC = 400V
Eon
Turn-On Switching Loss
— 220 270
Eoff
Turn-Off Switching Loss
— 215 265 J
Etotal
Total Switching Loss
— 435 535
IC = 22A, VCC = 390V,
td(on)
Turn-On delay time
tr
Rise time
— 26 34
VGE = +15V,
— 6.0 8.0 ns RG = 3.3, L = 200µH,
CT3
td(off)
Turn-Off delay time
— 110 122
TJ = 25°C
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 8.0 10
— 410 465
— 330 405 J
— 740 870
IC = 22A, VCC = 390V,
— 26 34
VGE = +15V,
— 8.0 11 ns RG = 3.3, L = 200µH,
— 130 150
TJ = 125°C
— 12 16
— 3715 —
— 265 —
— 47 —
VGE = 0V
VCC = 30V
pF f = 1.0Mhz
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
16
Coes eff.
Effective Output Capacitance (Time Related)
— 135 —
Coes eff. (ER) Effective Output Capacitance (Energy Related)
179
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
VGE = 0V, VCE = 0V to 480V
15
TJ = 150°C, IC = 120A
3
VCC = 480V, Vp 600V
CT2
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Irr
Peak Reverse Recovery Current
Rg = 22, VGE = +15V to 0V
42
74
80
220
60
120
180
600
ns
nC
TJ = 25°C
TJ
TJ
TJ
=
=
=
125°C
25°C
125°C
IF = 15A,
VR = 200V,
di/dt = 200A/µs
19
21
4.0 6.0
6.5 10
A
TJ = 25°C
TJ = 125°C
19,20,21,22
CT5
Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
 Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2
2017-08-24


Part Number AUIRGP35B60PD
Description IGBT
Maker Infineon
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AUIRGP35B60PD Datasheet PDF






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