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PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET

PTFC262157FH Description

PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 * 2690 MHz .
The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band.

PTFC262157FH Features

* include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ =

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTFC262157FH-like datasheet