PTFC262157FH - Thermally-Enhanced High Power RF LDMOS FET

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Infineon

Part number	PTFC262157FH
Manufacturer	Infineon
File Size	352.25 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC262157FH Datasheet
Additional preview pages of the PTFC262157FH datasheet.

The PTFC262157FH LDMOS FET is designed for use in Doherty cellular power applications in the 2620 MHz to 2690 MHz frequency band.

Input and output matching have been optimized for maximum performance as the peak side transistor in a Doherty amplifier.

include a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262157FH Package H-34288G-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 21 50 20 40 19 30 18 Gain 17 16 32 Efficiency 36 40 44 48 Output Power (dBm) 20 10 c262157sh-gr1 52 0.

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Published: Nov 27, 2016 |