PTFC210202FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Datasheet Details

Part number	PTFC210202FC
Manufacturer	Infineon
File Size	545.71 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFC210202FC Datasheet
Additional preview pages of the PTFC210202FC datasheet.

Product details

Description

The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band.

Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features

Input matched.
Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB.
Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power.
Integrated ESD protection : Human Body Mode.

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Published: Feb 25, 2016 |