PTFC210202FC fet equivalent, thermally-enhanced high power rf ldmos fet.
* Input matched
* Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB
* Capable of.
in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's advanced LDMOS process, this device provides excell.
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