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PTFC260202FC Datasheet Thermally-Enhanced High Power RF LDMOS FET

Manufacturer: Infineon

Overview: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690.

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General Description

The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band.

Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

PTFC260202FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 20 50 19 Gain 18 40 30 17 Efficiency 20 16 10 15 0 30 31 32 33 34 35 36 37 38 39 40 Output Power (dBm)

Key Features

  • Broadband input matching.
  • Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency = 57% - Linear Gain = 19.4 dB.
  • Capable of handling 10:1 VSWR @28 V, 25 W (CW) output power.
  • Integrated ESD protection.
  • Human Body Model Class 1B (per ANSI/ESDA.

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