Part number:
PTFC270101M
Manufacturer:
Wolfspeed
File Size:
1.44 MB
Description:
High power rf ldmos field effect transistor.
* Unmatched input and output
* Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%
* Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =
PTFC270101M Datasheet (1.44 MB)
PTFC270101M
Wolfspeed
1.44 MB
High power rf ldmos field effect transistor.
📁 Related Datasheet
PTFC270101M High Power RF LDMOS Field Effect Transistor (Infineon)
PTFC270051M High Power RF LDMOS Field Effect Transistor (Infineon)
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC261402FC Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC261402FC Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PTFC262157FH Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFC101C1G0 Platinum Temperature Sensors (TE)