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PTFC270101M Datasheet High Power Rf Ldmos Field Effect Transistor

Manufacturer: Wolfspeed

Overview: PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2700.

General Description

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to t 2700 MHz.

This LDMOS transistor offers excellent gain, efficiency c and linearity performance in a small overmolded plastic package.

PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) du Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, o 3GPP WCDMA signal, 8 dB PAR, r 10 MHz carrier spacing, 3.84 MHz bandwidth 23 70 p 22 60 Gain d 21 50 e 20 40 u 19 30 in 18 20 t Efficiency 17 10 n 16 c270101m-2.1-gr1c 0 24 26 28 30 32 34 36 38 40 co Output Power (dBm)

Key Features

  • Unmatched input and output.
  • Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%.
  • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =.
  • 44.9 dBc @ 5 MHz.
  • Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power.
  • Integrated ESD protection.
  • Pb-free and RoHS compliant dis RF Characteristics Two-carrier.

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