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PTFC270101M

High Power RF LDMOS Field Effect Transistor

PTFC270101M Features

* Unmatched input and output

* Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%

* Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =

PTFC270101M General Description

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (dB) D.

PTFC270101M Datasheet (401.56 KB)

Preview of PTFC270101M PDF

Datasheet Details

Part number:

PTFC270101M

Manufacturer:

Infineon ↗

File Size:

401.56 KB

Description:

High power rf ldmos field effect transistor.

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PTFC270101M High Power LDMOS Field Effect Transistor Infineon

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