PTFC270101M High Power RF LDMOS Field Effect Transistor

Infineon

Description

PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 * 2700 MHz .
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz.

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Datasheet Specifications

Part number: PTFC270101M
Manufacturer: Infineon ↗
File Size: 401.56 KB
Datasheet: PTFC270101M-Infineon.pdf
Description: High Power RF LDMOS Field Effect Transistor

Features

* Unmatched input and output
* Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efﬁciency = 60%
* Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efﬁciency = 21% - ACPR =

Applications

* with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, 3GPP

PTFC270101M Distributors

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PTFC270101M High Power LDMOS Field Effect Transistor Infineon

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