Datasheet4U Logo Datasheet4U.com

PTFC270101M High Power RF LDMOS Field Effect Transistor

PTFC270101M Description

PTFC270101M High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 * 2700 MHz .
The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz.

PTFC270101M Features

* Unmatched input and output
* Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60%
* Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR =

PTFC270101M Applications

* with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, ƒ = 2170 MHz, 3GPP

📥 Download Datasheet

Preview of PTFC270101M PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTFC101C1G0 - Platinum Temperature Sensors (TE)
  • PTF - Metal Film Resistors (Vishay)
  • PTF080101 - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
  • PTF080101S - LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ (Infineon Technologies AG)
  • PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
  • PTF080451E - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz (Infineon Technologies AG)
  • PTF080601 - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)
  • PTF080601A - LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz (Infineon Technologies AG)

📌 All Tags

High Power LDMOS Field Effect Transistor Infineon
Infineon PTFC270101M-like datasheet