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PTFC262808SV - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.

Key Features

  • include input and output matching, high gain and thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262808SV Package H-37275G-6/2 with formed leads Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.84 MHz BW 19 40 18 Gain 17 35 30 16 25 Efficiency 15 20 14 15 13 c262808sv-gr1.

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Datasheet Details

Part number PTFC262808SV
Manufacturer Infineon
File Size 172.83 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTFC262808SV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTFC262808SV Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz Description The PTFC262808SV is a 280-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFC262808SV Package H-37275G-6/2 with formed leads Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.