Datasheet Details
| Part number | PTFA181001GL |
|---|---|
| Manufacturer | Infineon |
| File Size | 335.49 KB |
| Description | Thermally-Enhanced High Power RF LDMOS FET |
| Datasheet |
 PTFA181001GL Datasheet
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General Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.
Key Features
- include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL.
- Package PG-63248-2 PTFA181001HL.
- Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -30 35 Features.
- Thermally-enhanced, plastic open-cavity (EPOC™.