PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET

Infineon Technologies

Datasheet Details

Part number	PTFA181001GL
Manufacturer	Infineon ↗ Technologies
File Size	335.49 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA181001GL_InfineonTechnologies.pdf

The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.

include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001GL.
Package PG-63248-2 PTFA181001HL.
Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -30 35 Features.
Thermally-enhanced, plastic open-cavity (EPOC™.

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Published: Jul 11, 2011 |