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Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22161B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 160W, 28V High Power RF LDMOS FETs
Description
The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22161B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Frequency
Gp @ POUT=48dBm
P-1dB
P-3dB
D@P-3
(MHz)
(dB)
(dBm)
(dBm)
(%)
2110
17.5
52.5
53.3
56
2140
17.5
52.2
53.1
56
2170
17.5
51.8
52.
ITCH22161B2 Datasheet
