Datasheet Details
| Part number | ITCH22161B2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 877.19 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
 ITCH22161B2 Datasheet
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General Description
The ITCH22161B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
TypKey Features
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Excellent thermal stability, low HCI drift.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characterist.