* 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial and Industrial:
* 150MHz 3.8ns clock access time
* 133MHz 4.2ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write ena
IDT71V2576S Datasheet (282.49 KB)
IDT71V2576S
Integrated Device Technology
282.49 KB
128k x 36/ 256k x 18 3.3v synchronous srams 2.5v i/o/ pipelined outputs/ burst counter/ single cycle deselect.
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect x x IDT71V2576S IDT71V2578S IDT71V2576S.
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