IRF6614PBF - Power MOSFET

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6614PBF
Manufacturer	International Rectifier
File Size	292.80 KB
Description	Power MOSFET
Datasheet	IRF6614PBF Datasheet
Additional preview pages of the IRF6614PBF datasheet.

Product details

Description

The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 2.0 40 ID = 250µA 1.5 30 20 1.0 10 0 25 50 75 100 125 150 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature (°C) TJ , Temperature ( °C ) Fig 12.

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Published: Apr 1, 2014 |