IRF6614PBF Datasheet - International Rectifier

Power MOSFET

IRF6614PBF Features

* ent (A) 10.0 TJ = 150°C TJ = 25°C TJ = -40°C 1.0 1msec 10msec VGS = 0V 0.1 0.2 0.6 1.0 1.4 1.8 2.2 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 2.5 Fig11. Maximum Safe Operating Area 50 VGS(th) Gate threshold Voltage

IRF6614PBF General Description

The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries u.

IRF6614PBF Datasheet (292.80 KB)

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IRF6614PBF

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International Rectifier

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292.80 KB

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Power mosfet.
PD -97090 Typical values (unless otherwise specified) DirectFET Power MOSFET RDS(on) Qgs2 1.4nC IRF6614PbF IRF6614TRPbF RDS(on) Qoss 9.5nC RoHS.

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IRF6614PBF Power MOSFET International Rectifier

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IRF6614PBF Features

IRF6614PBF General Description

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