IRF6638PbF - DirectFET Power MOSFET

International Rectifier

IRF6638PbF Datasheet Preview — Preview of IRF6638PbF PDF

Datasheet Details

Part number	IRF6638PbF
Manufacturer	International Rectifier ↗
File Size	293.06 KB
Description	DirectFET Power MOSFET
Datasheet	IRF6638PbF_InternationalRectifier.pdf

IRF6638PbF Product details

Description

The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 150 125 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltag.

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Published: Apr 23, 2010 |