IRF6638PbF mosfet equivalent, directfet power mosfet.
10 2.5V
≤60µs PULSE WIDTH
Tj = 150°C 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V ≤60µs PULSE WIDTH 100
Fig 5..
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package .
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