Description
PD - 97239 IRF6638PbF IRF6638TRPbF www.DataSheet4U.com DirectFET Power MOSFET RoHs Compliant Typical values (unless otherwise specified) l Lead.
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
150 125
ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 250µA
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t